Toshiba Aims Below 25nm with New NAND Flash

Toshiba is preparing to invest heavily in new production technologies for NAND flash memory. Intel is about to launch its first solid-state drives with circuits manufactured in 28 nanometer in the fourth quarter, but Toshiba is already way ahead. The company plans to go into a test phase with NAND flash circuits manufactured at less than 25nm.

Toshiba says that although the jump from 28nm down to the lower 20nm technology could seem small on paper, it is a switch that requires ultraviolet lithography at shorter wavelengths, which requires new equipment and factory upgrades. The upgrade is apparently planned for Toshiba’s Fab 4 plant, which would be in addition to the already planned Fab 5 in the same area.

Special equipment developed by a Dutch company is already headed for Toshibas, which hopes that mass production of sub-20nm tech will start in 2012. This is great, as it will open up for both roomier and cheaper SSDs.

Via PCMag

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